The synthesis process of graphene primarily involves chemical vapor deposition (CVD).
This method grows high-quality graphene films on various substrates, particularly transition metals like nickel and copper.
CVD is favored for its ability to produce large-area, uniform graphene films suitable for industrial applications.
What is the synthesis process of graphene? 5 Key Steps Explained
1. Catalyst and Substrate
The process begins with a catalyst, usually copper or nickel, which is used as the substrate.
These metals are chosen because of their ability to interact with carbon atoms during the deposition process.
Copper, for example, has low carbon solubility, which allows for the formation of monolayer graphene through surface adsorption.
Nickel has high carbon solubility, facilitating the diffusion and segregation of carbon atoms.
2. Carrier Gases and Feed Material
The catalyst is exposed to carrier gases, typically hydrogen or argon, and a feed material such as methane.
These gases are introduced into the reaction chamber where they decompose at high temperatures, releasing carbon atoms.
3. Growth Conditions
The temperature, pressure, and duration of the reaction are critical parameters that must be precisely controlled to ensure the quality and uniformity of the graphene film.
The carbon atoms from the decomposed methane diffuse into the metal substrate and then precipitate out as graphene during the cooling process.
4. Cooling and Transfer
After the growth phase, the system is cooled, causing the graphene to form on the surface of the metal.
The graphene is then transferred to a desired substrate using methods that prevent contamination and damage to the delicate film.
5. Industrial Applications
The CVD method, particularly using copper foil, has been industrialized for large-scale production of graphene films.
Techniques like batch-to-batch (B2B) and roll-to-roll (R2R) processes have been developed to optimize throughput and achieve large widths and lengths of graphene films.
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