Magnetron sputtering was invented in the 1970s, specifically in 1974, with the invention of the planar magnetron sputtering source by John S. Chapin.
This technique revolutionized the field of thin film deposition by offering higher deposition rates and lower damage to substrates compared to earlier methods like diode sputtering.
5 Key Points to Understand the Breakthrough
1. Development and Invention
The concept of sputtering itself dates back to 1852, but it was primarily used for depositing refractory metal films that could not be achieved through thermal evaporation.
The evolution of sputtering technology saw the introduction of radio frequency (RF) sputtering, which expanded its application to include dielectric films.
However, the real breakthrough came with the invention of magnetron sputtering in the 1970s.
2. Magnetron Sputtering Technique
Magnetron sputtering is characterized by the addition of a closed magnetic field over the target surface.
This magnetic field enhances the efficiency of plasma generation by increasing the probability of collisions between electrons and argon atoms near the target surface.
The magnetic trap established by this field leads to a cascade of secondary electron generation, which further boosts plasma production and density.
This results in a higher rate of sputtering and lower temperatures, making it a superior method compared to diode sputtering.
3. Impact and Commercialization
The introduction of magnetron sputtering in 1974 marked a significant advancement in the field of vacuum coating methods.
It offered not only a higher deposition rate but also reduced damage to the substrates.
The technique gained commercial success in industries such as microelectronics and architectural glass in the 1960s and 1970s.
Today, magnetron sputtering sources are commercially available in various configurations, including circular, rectangular, and tubular forms, and have been adapted for specific applications through engineered magnetic field approaches.
4. Conclusion
The invention of magnetron sputtering in 1974 by John S. Chapin significantly improved the efficiency and applicability of sputtering processes, making it a cornerstone technology in the deposition of thin films across various industries.
Its development was a response to the limitations of earlier sputtering methods, particularly in terms of speed and substrate damage, and it has since become a widely adopted and continuously evolving technology.
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