The type of sputtering system used to deposit ZnO thin film is likely to be Magnetron Sputtering with Reactive Sputtering. This method involves using a solid target material, typically zinc, in combination with a reactive gas, such as oxygen, to form zinc oxide (ZnO) as the deposited film.
Magnetron Sputtering is chosen for its ability to produce high-purity, consistent, and homogeneous thin films. It is a physical deposition method where the target material (zinc) is sublimated due to ion bombardment, allowing the material to evaporate directly from the solid state without melting. This method ensures excellent adhesion to the substrate and can handle a wide range of materials.
Reactive Sputtering is incorporated by introducing a reactive gas (oxygen) into the sputtering chamber. This gas reacts with the sputtered zinc atoms either on the target surface, in-flight, or on the substrate, forming zinc oxide. The use of reactive sputtering allows for the deposition of compound materials like ZnO, which cannot be achieved with elemental targets alone.
The system configuration for such a deposition process might include options like substrate pre-heat stations, sputter etch or ion source capability for in situ cleaning, substrate bias capability, and possibly multiple cathodes. These features enhance the quality and uniformity of the deposited ZnO film, ensuring it meets the desired specifications for various applications.
Despite the advantages, challenges such as stoichiometry control and undesired outcomes from reactive sputtering need to be managed. The complexity of the process, due to the many parameters involved, requires expert control to optimize the growth and microstructure of the ZnO film.
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