The different types of annealing in semiconductors include nitrogen annealing, forming gas annealing, rapid thermal annealing, diffusion annealing, and general annealing.
1. Nitrogen Annealing: In this process, pure nitrogen gas flows through the chamber containing the wafers. It is used to modify the microstructure of the semiconductor material and improve its properties.
2. Forming Gas Annealing: This process is similar to nitrogen annealing, but it involves the use of a forming gas, which is a mixture of nitrogen and hydrogen. Forming gas annealing is also used to modify the microstructure and properties of the semiconductor material.
3. Rapid Thermal Annealing: This process involves heating a single wafer at a time to a high temperature for a short duration. It is used to affect the electrical properties of the semiconductor material.
4. Diffusion Annealing: Diffusion annealing is performed at very high temperatures and over long durations. It is used to eliminate structure inhomogeneities or concentration differences in the semiconductor material. This process enhances the strength and corrosion resistance of the material.
In addition to these specific types of annealing, there is also a general annealing process that is used to relieve internal stresses, improve the uniformity and internal structure of the semiconductor material, and increase its ductility. This general annealing process involves heating the material above its recrystallization temperature, maintaining a suitable temperature for a specific duration, and then cooling it.
Overall, the choice of annealing technique depends on the type of material and the desired properties of the semiconductor wafer.
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