The Atomic Layer Deposition (ALD) process involves sequential, self-limiting chemical reactions between gas-phase precursors and active surface species to deposit thin films with high uniformity and excellent conformality. The process is characterized by its ability to control film growth at the atomic layer scale and is widely used in the semiconductor industry for developing thin, high-K gate dielectric layers.
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Introduction of Precursor: The ALD process begins with the introduction of a precursor into a high-vacuum process chamber containing the substrate. The precursor forms a chemically-bound monolayer on the substrate surface. This step is self-limiting, meaning that only one layer of precursor molecules chemically bonds to the surface, ensuring precise control over the thickness of the layer.
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Removal of Excess Precursor: After the monolayer is formed, the chamber is re-evacuated and purged to remove any excess precursor that is not chemically bonded. This step ensures that only the desired monolayer remains on the substrate, preventing unwanted additional layers.
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Introduction of Reactant: The next step involves introducing a reactant into the chamber. This reactant chemically reacts with the monolayer of the precursor, forming the desired compound on the substrate surface. This reaction is also self-limiting, ensuring that only the monolayer of the precursor is consumed.
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Removal of Reaction By-products: After the reaction, any by-products are pumped away from the chamber, clearing the way for the next cycle of precursor and reactant pulses. This step is crucial for maintaining the purity and quality of the film being deposited.
Each cycle of precursor and reactant pulses contributes a very thin layer to the overall film, typically ranging from 0.04nm to 0.10nm in thickness. The process is repeated until the desired film thickness is achieved. ALD is known for its excellent step coverage, even over features with high aspect ratios, and its ability to deposit films predictably and uniformly, even at thicknesses under 10nm. This precision and control make ALD a valuable technique in the fabrication of microelectronics and other thin film devices.
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