In PECVD (Plasma Enhanced Chemical Vapor Deposition), various gases are used depending on the specific application and desired film composition. Some of the commonly used gases include:
1. Silane (SiH4): Silane is a precursor gas that is often used in PECVD processes to deposit silicon-based films such as silicon nitride and silicon oxide. It is mixed with other gases to control the film properties.
2. Ammonia (NH3): Ammonia is another precursor gas used in PECVD processes. It is commonly used in combination with silane to deposit silicon nitride films. Ammonia helps to control the nitrogen content in the film.
3. Argon (Ar): Argon is an inert gas that is often used as a carrier gas or dilutant gas in PECVD processes. It is mixed with precursor gases to control the reaction and ensure uniform deposition of the film.
4. Nitrogen (N2): Nitrogen is another inert gas that can be used in PECVD processes. It is commonly used as a carrier gas or dilutant gas to control the reaction and prevent undesired gas-phase reactions.
5. Methane (CH4), Ethylene (C2H4), and Acetylene (C2H2): These hydrocarbon gases are used in PECVD processes for growing carbon nanotubes (CNTs). They are dissociated by the plasma to generate amorphous carbon products. To prevent the formation of amorphous products, these gases are typically diluted with argon, hydrogen, or ammonia.
It is important to note that the specific gas combinations and process parameters can vary depending on the desired film properties, substrate material, and equipment setup. The gases mentioned above are just some examples commonly used in PECVD processes.
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