What are the process capabilities of ICPCVD systems? Achieve Low-Damage Film Deposition at Ultra-Low Temperatures

ICPCVD systems are primarily characterized by their ability to deposit high-quality, low-damage films while maintaining exceptionally low substrate temperatures. These systems provide a versatile processing environment capable of handling temperatures as low as 5°C, making them ideal for temperature-sensitive substrates while supporting standard dielectric and semiconductor material deposition.

The core value of an ICPCVD system lies in decoupling plasma density from ion energy, allowing for the deposition of high-quality films like SiO2 and SiC on wafers up to 200mm without the thermal damage associated with conventional high-temperature processes.

Thermal Versatility and Substrate Protection

Ultra-Low Temperature Processing

One of the most distinct capabilities of these systems is the ability to maintain substrate temperatures as low as 5°C. This allows for processing on delicate substrates that cannot withstand standard thermal budgets.

Broad Electrode Temperature Range

The system offers significant thermal flexibility, with an electrode temperature range spanning from 5°C up to 400°C. This wide window allows engineers to tune film properties by adjusting thermal energy without locking the process into a high-heat regime.

Material Versatility and Film Quality

High-Quality Dielectrics and Semiconductors

The system is optimized to deposit a variety of essential fabrication materials. Standard process capabilities include Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), and Silicon Oxynitride (SiON).

Advanced Material Support

Beyond standard dielectrics, the system supports the deposition of Silicon (Si) and Silicon Carbide (SiC). The resulting films are noted for being high-quality and exhibiting low damage, a critical factor for high-performance device layers.

Process Scalability and Control

Wafer Size Accommodation

These systems are designed to scale effectively for research and mid-volume production. They accommodate wafer sizes up to 200mm, covering the vast majority of specialized semiconductor and MEMS applications.

Optimizing Uniformity via Source Sizing

To ensure process uniformity across different wafer sizes, the Inductively Coupled Plasma (ICP) source is modular. It is available in three distinct sizes: 65mm, 180mm, and 300mm.

Operational Efficiency

Integrated Chamber Cleaning

To maintain process repeatability and reduce particle contamination, the system supports in-situ chamber cleaning.

Precision Endpoint Monitoring

The cleaning process is governed by real-time endpoint monitoring. This prevents over-etching of chamber components and ensures the system is returned to a pristine state efficiently between runs.

Understanding Operational Considerations

Matching Source Size to Application

While the system supports wafers up to 200mm, uniformity is heavily dependent on hardware configuration. You must ensure the selected ICP source size (65mm, 180mm, or 300mm) creates a plasma field strictly appropriate for your specific substrate dimensions to avoid edge effects.

Thermal Trade-offs

While the system is capable of 400°C operation, its defining feature is the low-temperature capability (5°C). Users operating exclusively at the high end of this range (400°C) should verify that the specific hardware configuration and cooling loops are optimized for sustained high-temp throughput.

Making the Right Choice for Your Goal

When evaluating an ICPCVD system for your fabrication line, consider your specific processing priorities:

• If your primary focus is Temperature-Sensitive Substrates: Leverage the system's ability to hold substrates at 5°C to deposit films without thermal degradation.
• If your primary focus is Process Uniformity: Select the ICP source size (up to 300mm) that provides the optimal coverage for your specific wafer diameter (up to 200mm).
• If your primary focus is Film Integrity: Rely on the system's low-damage deposition capabilities for critical layers involving SiO2, Si3N4, or SiC.

This system effectively bridges the gap between high-quality film requirements and strict thermal constraints.

Summary Table:

Feature	Specification / Capability
Temperature Range	5°C to 400°C
Wafer Size Support	Up to 200 mm
Standard Materials	SiO2, Si3N4, SiON
Advanced Materials	Silicon (Si), Silicon Carbide (SiC)
ICP Source Sizes	65mm, 180mm, 300mm
Key Features	In-situ cleaning & Real-time endpoint monitoring

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