LPCVD stands for Low Pressure Chemical Vapor Deposition. It is a technique used in the semiconductor industry to deposit thin films of various materials onto a substrate. The process involves the use of reactive gases at low pressures, typically below 133 Pa, and is performed in a high thermal environment. This method allows for excellent film uniformity, resistivity uniformity, and trench coverage filling capability due to the increased gas diffusion coefficient and mean free range within the reaction chamber. LPCVD is widely used for depositing materials such as polysilicon, silicon nitride, and silicon dioxide, among others, and is favored for its ability to produce films with fewer defects and higher step coverage compared to thermally grown films. The process is also notable for its precision in controlling temperature, which contributes to the high uniformity of the deposited films across different wafers and runs.
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