Graphene growth can occur at surprisingly low temperatures.
One example is the process of cooling a Ni thin film from 900°C to 725°C.
This resulted in the formation of 1.7 layers of graphene on the film’s surface.
This temperature is significantly lower than the typical pyrolytic decomposition temperatures, which require over 1000 °C.
The use of metal catalyst substrates in the chemical vapor deposition (CVD) process helps reduce the reaction temperature.
This facilitates the decomposition of carbon precursors and the formation of graphene.
The process involves the adsorption of carbon precursors on the catalyst surface.
These precursors then decompose into various carbon species.
These carbon species serve as the building blocks for graphene growth.
This method is particularly effective in low-pressure CVD systems.
Even very low partial pressures can promote graphene nucleation and growth due to the presence of oil and gas contamination.
Moreover, the use of liquid or solid carbon precursors like benzene and naphthalene can facilitate low-temperature growth.
This is due to their ease of decomposition compared to methane.
However, these precursors can also adsorb to the inner walls of the system chambers and piping.
This can potentially lead to contamination issues that affect system reliability and production repeatability.
In summary, while graphene growth traditionally requires high temperatures, advancements in catalyst-assisted CVD and the use of specific carbon precursors have enabled the synthesis of graphene at significantly lower temperatures, down to 725°C.
This development is crucial for reducing energy costs and enhancing the feasibility of graphene production for various applications.
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