What is the primary function of a horizontal MOCVD reactor? Achieve Precise InGaN Single-Crystal Growth

The primary function of a horizontal MOCVD reactor is to execute the epitaxial growth of single-crystal layers on substrates, such as c-plane patterned sapphire. By rigorously controlling reaction chamber pressure and the ratios of gaseous precursors like TMGa, TEGa, TMIn, and ammonia, this equipment builds the complex heterostructures required for high-performance InGaN wafers.

The core value of this technology is its precision; it transforms volatile chemical precursors into stable, atomic-level structures. This capability is essential for creating the sharp interfaces and high crystal quality needed for advanced optical components.

The Mechanics of Epitaxial Growth

To understand the reactor's role, one must look beyond simple deposition. The process involves orchestrating a complex chemical environment to build materials atom by atom.

Precise Precursor Management

The reactor operates by introducing specific gaseous precursors into the chamber. The primary sources used are TMGa (Trimethylgallium), TEGa (Triethylgallium), TMIn (Trimethylindium), and ammonia.

Success depends on the operator's ability to manipulate the flow rates and specific ratios of these gases. This mixture determines the composition and stoichiometry of the resulting crystal layers.

Substrate Interaction

Growth typically occurs on c-plane patterned sapphire substrates. The horizontal configuration of the reactor facilitates the uniform delivery of reactant gases across the wafer surface.

This setup ensures that the crystalline structure of the substrate is replicated and extended into the new layers, a process known as epitaxy.

Achieving Structural Complexity

The ultimate goal is to form complex heterostructures, such as InGaN/GaN quantum wells and electron blocking layers.

The reactor enables atomic-level abrupt interface control, meaning the transition between different material layers is sharp and distinct. This sharpness is critical for maintaining the quantum mechanical properties of the device.

Critical Operational Factors

While the horizontal MOCVD reactor enables high-quality growth, it requires strict adherence to process parameters. The system is not "set and forget"; it relies on dynamic equilibrium.

Sensitivity to Pressure and Flow

The reference emphasizes the need to control reaction chamber pressure alongside gas flow.

If the pressure or precursor ratios fluctuate, the crystal quality degrades immediately. Achieving the desired "atomic-level" precision demands that these variables remain perfectly synchronized throughout the growth cycle.

Implications for Wafer Fabrication

The capabilities of a horizontal MOCVD reactor dictate how you should approach the fabrication process.

• If your primary focus is Crystal Purity: Prioritize the precise calibration of precursor flow rates (TMGa/TEGa/TMIn) to minimize defects in the lattice structure.
• If your primary focus is Device Performance: Leverage the reactor's ability to create abrupt interfaces to optimize the efficiency of quantum wells and electron blocking layers.

Mastering the horizontal MOCVD process is the definitive step in converting raw chemical potential into functional, high-quality semiconductor material.

Summary Table:

Feature	Function in Horizontal MOCVD
Primary Goal	Epitaxial growth of single-crystal layers on substrates
Key Precursors	TMGa, TEGa, TMIn, and Ammonia (NH3)
Common Substrate	c-plane patterned sapphire
Critical Structures	InGaN/GaN quantum wells & electron blocking layers
Control Parameters	Chamber pressure, gas flow ratios, and atomic interface abruptness

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References

1. Junjie Kang, Heon Lee. InGaN-based photoanode with ZnO nanowires for water splitting. DOI: 10.1186/s40580-016-0092-8

This article is also based on technical information from Kintek Solution Knowledge Base .