The RF frequency for sputtering is typically 13.56 MHz.
This frequency is chosen for several reasons.
1. Compatibility with ISM Bands
The frequency of 13.56 MHz is within the Industrial, Scientific, and Medical (ISM) radio bands.
These bands are reserved globally for non-commercial use to prevent interference with telecommunication services.
This standardization allows for the widespread and consistent use of RF sputtering technology without regulatory conflicts.
2. Efficient Ion Interaction
At 13.56 MHz, the frequency is low enough to allow sufficient time for the momentum transfer of argon ions to the target material during each cycle.
This is crucial for effective sputtering, as it ensures that the ions have enough time to impact the target and dislodge particles without being too rapid to interact effectively.
3. Electron Oscillation and Plasma Rate
The frequency is also high enough to enable electrons to oscillate within the plasma, leading to a high plasma density.
This high plasma rate allows for lower operating pressures (10^-1 to 10^-2 Pa), which can result in the deposition of thin films with different microstructures compared to those produced at higher pressures.
4. Avoidance of Charge Build-up
In RF sputtering, the alternating electrical potential helps to prevent charge build-up on the target material, particularly for insulating materials.
This is critical as charge build-up can lead to arcing and other quality control issues in the sputtering process.
In summary, the use of 13.56 MHz in RF sputtering is a result of its optimal balance between allowing efficient ion bombardment and preventing electrical charge accumulation on the target, all while complying with international radio frequency regulations.
This frequency is particularly effective for sputtering both conductive and non-conductive materials, making it a versatile and widely used technique in thin film deposition.
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