Chemicals that show deposition include various precursors used in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. These precursors are transformed into thin films or coatings on substrates through surface reactions. Common precursors for CVD include halides, hydrides, metal alkoxides, metal dialkylamides, metal diketonates, metal carbonyls, metal alkoxides, organometallics, and oxygen.
Halides: Examples of halide precursors include HSiCl3, SiCl2, TiCl4, and WF6. These compounds are commonly used in the semiconductor industry for depositing silicon, titanium, and tungsten films. The halides are typically volatilized and then react at the substrate surface to form the desired material.
Hydrides: Hydride precursors like AlH(NMe3)3, SiH4, GeH4, and NH3 are used for depositing aluminum, silicon, germanium, and nitrogen-containing films, respectively. These compounds are often preferred due to their high reactivity, which facilitates the formation of stable films on the substrate.
Metal Alkoxides: TEOS (tetraethylorthosilicate) and Tetrakis Dimethylamino Titanium (TDMAT) are examples of metal alkoxides used in CVD processes. TEOS is commonly used for depositing silicon oxide, while TDMAT is used for depositing titanium nitride. These precursors are advantageous because they can form high-quality films with good uniformity.
Metal Dialkylamides and Metal Diketonates: Examples include Ti(NMe2) and Cu(acac), which are used for depositing titanium and copper films, respectively. These precursors are chosen for their ability to form stable, high-quality films with controlled thickness and composition.
Metal Carbonyls and Metal Alkoxides: Ni(CO) and Ti(OiPr)4 are examples of metal carbonyls and alkoxides used in CVD. These precursors are particularly useful for depositing metal films with high purity and good adhesion to the substrate.
Organometallics: Compounds like AlMe3 and Ti(CH2tBu) are used in CVD for depositing aluminum and titanium films, respectively. Organometallic precursors are favored for their high reactivity and the ability to form films with specific properties.
Oxygen: Although not a precursor in the traditional sense, oxygen is often used in conjunction with other precursors to facilitate oxidation reactions, which are crucial for depositing oxide films.
In summary, the chemicals that show deposition are primarily the precursors used in CVD and PVD processes. These precursors undergo surface reactions on the substrate, leading to the formation of thin films or coatings with specific properties tailored to the application's needs. The choice of precursor and deposition method depends on the desired film properties, such as thickness, uniformity, and adhesion to the substrate.
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