The temperature of sputtering plasma in magnetron can vary depending on the specific process conditions and target material. In reactive sputtering processes with limited cooling capability for the target, the temperature can range from 720 to 1210 °C. This temperature range is achieved by generating plasma pulses at frequencies ranging from 0.5 to 1 Hz.
Magnetron sputtering is a process where a negative voltage of typically -300V or more is applied to the target. This negative voltage attracts positive ions to the target surface at high speed. When a positive ion collides with atoms at the surface of the target, an energy transfer occurs. If the energy transferred to a lattice site is greater than the binding energy, primary recoil atoms can be created, which can collide with other atoms and distribute their energy via collision cascades. A surface atom becomes sputtered if the energy transferred to it normal to the surface is larger than about 3 times the surface binding energy.
The use of a magnetic field in magnetron sputtering, known as the trapping effect, allows for increased ionization and coating deposition rates at lower temperatures. The magnetic field controls the transmission path of the plasma and the magnetic lines formed guide the plasma from one end of the target to the other. This magnetic field-based transmission path increases the amount of plasma, leading to improved efficiency in the production process. This method is sometimes referred to as balanced magnetron sputtering.
In summary, the temperature of sputtering plasma in magnetron can be controlled and adjusted based on the specific process conditions and requirements. The use of a negative voltage and a magnetic field in magnetron sputtering allows for efficient ionization and sputtering of target atoms, leading to the deposition of thin films on substrates.
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