The atmospheric pressure CVD (APCVD) process is a method of chemical vapor deposition that takes place at normal atmospheric pressure.
It is used for the deposition of various oxides on a substrate.
In an APCVD system, the reaction chamber operates at atmospheric pressure, or 1 atm.
7 Key Points to Know About the Atmospheric Pressure CVD Process
1. Compatibility with Vacuum-Free Processes
The APCVD process is compatible with vacuum-free, continuous in-line processes.
This makes it suitable for cost-sensitive, high-volume manufacturing applications like PV cell manufacturing.
2. Versatility in Deposition
It can be used to deposit epitaxial silicon and compound films in a cold wall reactor.
It can also be used to create hard metallurgical coatings like TiC and TiN in a hot wall reactor.
3. High Deposition Rate
The APCVD process typically has a high deposition rate.
This means it can quickly deposit a layer of material on a wafer or substrate.
4. Long Service Life and Optimal Performance
Films generated using this deposition technique have a long service life.
They provide optimal performance in various applications.
5. Comparison with Other CVD Processes
In addition to atmospheric pressure CVD, there are two other categories of CVD processes: low-pressure CVD (LPCVD) and ultra-high vacuum CVD (UHVCVD).
LPCVD operates at sub-atmospheric pressure, reducing the likelihood of unwanted vapor phase reactions and improving the uniformity of the deposited film.
UHVCVD, on the other hand, takes place at very low pressure, usually below 10-6 Pa.
6. Varied Classifications of CVD Processes
There are also various classifications of CVD processes based on substrate heating, material properties, and types of plasma utilized.
These include aerosol-assisted CVD, direct liquid injection CVD, plasma-enhanced CVD, microwave-plasma-assisted CVD, hybrid physical-chemical CVD, and photo-assisted CVD.
7. Versatility and Efficiency
Overall, the atmospheric pressure CVD process is a versatile and efficient method for depositing oxide films on substrates.
It offers high deposition rates and compatibility with vacuum-free, continuous manufacturing processes.
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