Microwave plasma chemical vapor deposition (MPCVD) is a synthesis method used for diamond film synthesis. It involves the use of microwave radiation to generate a high-energy plasma in a reactor chamber. The plasma consists of a mixture of electrons, atomic ions, molecular ions, neutral atoms, molecules, and molecular fragments in their ground and excited states. The main route for the generation of reactive gaseous precursors/fragments in the plasma is electron impact dissociation.
In the MPCVD process, a carbon-containing gas, such as methane, is introduced into the reactor chamber along with other gases like hydrogen, oxygen, or fluorine atoms. The microwave generator, typically a magnetron or klystron, generates microwaves in the range of 2.45 GHz, which are coupled to the vacuum chamber through a quartz window. The gas delivery system, consisting of mass flow controllers (MFCs), controls the flow of gas into the vacuum chamber.
Under the excitation of microwave radiation, the gas mixture undergoes a glow discharge in the reaction chamber, leading to the molecular dissociation of the reaction gas and the generation of plasma. The plasma reacts or decomposes on the surface of the substrate, producing a deposit of diamond film. The deposition process results in high-quality diamond films with large areas, good homogeneity, high purity, and good crystalline morphology.
The advantages of MPCVD include its ability to prepare large-size single crystal diamonds and the production of large and stable plasma balls in the deposition chamber, enabling the deposition of diamond films over a large area. The microwave plasma method also offers superior control over the deposition process compared to other methods like the flame method.
Overall, MPCVD is a technique that utilizes microwave-induced plasma and reactive gaseous precursors to deposit diamond films with high quality and specific properties.
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